DocumentCode :
2154403
Title :
Generic fractal behaviour of ballistic devices
Author :
Taylor, R.P. ; Newbury, R. ; Micolich, A.P. ; Davies, A.G. ; Fromhold, T.M. ; Linke, H. ; Macks, L.D. ; Tribe, W.R. ; Linfield, E.H. ; Ritchie, D.A. ; Martin, T.P.
Author_Institution :
Dept. of Phys., Oregon Univ., Eugene, OR, USA
fYear :
2002
fDate :
11-13 Dec. 2002
Firstpage :
293
Lastpage :
298
Abstract :
Semiconductor billiard systems are used to investigate fractal conductance fluctuations and their dependence on two crucial parameters of ballistic transport - the shape and energy profile of the device walls.
Keywords :
ballistic transport; fractals; semiconductor devices; AlGaAs-GaAs; ballistic devices; ballistic transport; device wall shape; energy profile; fractal conductance fluctuations; generic fractal behaviour; nanotechnology; semiconductor billiard systems; Astronomy; Electrons; Fluctuations; Fractals; Gallium arsenide; Laboratories; Physics; Quantum mechanics; Shape; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
ISSN :
1097-2137
Print_ISBN :
0-7803-7571-8
Type :
conf
DOI :
10.1109/COMMAD.2002.1237249
Filename :
1237249
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2154403
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