• DocumentCode
    2154408
  • Title

    Ultra Broadband Low Power MMIC Amplifier

  • Author

    Radisic, Vesna ; Weinreb, Sander ; Micovic, Miro ; Hu, Ming ; Janke, Paul ; Ngo, Catherine ; Harvey, Duane ; Matloubian, Mehran ; Nguyen, Loi

  • Author_Institution
    HRL Laboratories, LLC, Malibu, CA 90265, USA
  • fYear
    2000
  • fDate
    Oct. 2000
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A low power two-stage InP HEMT MMIC amplifier has been developed. The amplifier utilizes 0.12 ¿m T-gate InP HEMTs with 2×25 ¿m gate periphery. This compact microstrip MMIC is only 1.5 mm2 in size. It exhibits gain of 12.5±1 dB at 15 mW of dissipated power over an operating range from 1 to 50 GHz. The gain-bandwidth/dissipation figure of merit is 40 dB GHz/mW. The average noise figure is 3 to 3.8 dB over the Ka band.
  • Keywords
    Broadband amplifiers; Distributed amplifiers; Gain; HEMTs; Indium phosphide; MMICs; Microstrip; Noise figure; Resistors; Semiconductor device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2000. 30th European
  • Conference_Location
    Paris, France
  • Type

    conf

  • DOI
    10.1109/EUMA.2000.338730
  • Filename
    4139743
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2154408