Title :
Ultra Broadband Low Power MMIC Amplifier
Author :
Radisic, Vesna ; Weinreb, Sander ; Micovic, Miro ; Hu, Ming ; Janke, Paul ; Ngo, Catherine ; Harvey, Duane ; Matloubian, Mehran ; Nguyen, Loi
Author_Institution :
HRL Laboratories, LLC, Malibu, CA 90265, USA
Abstract :
A low power two-stage InP HEMT MMIC amplifier has been developed. The amplifier utilizes 0.12 ¿m T-gate InP HEMTs with 2×25 ¿m gate periphery. This compact microstrip MMIC is only 1.5 mm2 in size. It exhibits gain of 12.5±1 dB at 15 mW of dissipated power over an operating range from 1 to 50 GHz. The gain-bandwidth/dissipation figure of merit is 40 dB GHz/mW. The average noise figure is 3 to 3.8 dB over the Ka band.
Keywords :
Broadband amplifiers; Distributed amplifiers; Gain; HEMTs; Indium phosphide; MMICs; Microstrip; Noise figure; Resistors; Semiconductor device modeling;
Conference_Titel :
Microwave Conference, 2000. 30th European
Conference_Location :
Paris, France
DOI :
10.1109/EUMA.2000.338730
