• DocumentCode
    2154504
  • Title

    Low-power carry look-ahead adder with multi-threshold voltage CMOS technology

  • Author

    Dong Whee Kim ; Kim, Jeong Beom

  • Author_Institution
    Samsung SDI Co., Ltd., South Korea
  • fYear
    2008
  • fDate
    20-23 Oct. 2008
  • Firstpage
    2160
  • Lastpage
    2163
  • Abstract
    Multi-threshold CMOS (MTCMOS) technology provides the transistors that have low-, normal-, and high-threshold voltage. This paper describes a low-power carry look-ahead adder with MTCMOS technology. While the low-threshold voltage transistors are used to reduce the propagation delay time in the critical path, the high-threshold voltage transistors are used to reduce the power consumption in the shortest path. Comparing with the conventional CMOS circuit, the circuit is achieved to reduce the power consumption by 14.71% and the power-delay-product by 16.11%. This circuit is designed with Samsung 0.35 um CMOS process. The validity and effectiveness are verified through the HSPICE simulation.
  • Keywords
    CMOS digital integrated circuits; SPICE; adders; transistors; HSPICE simulation; MTCMOS technology; Samsung CMOS process; high-threshold voltage transistors; low-power carry look-ahead adder; low-threshold voltage transistors; multi-threshold voltage CMOS technology; propagation delay time; Adders; CMOS technology; Circuit simulation; Circuit synthesis; Energy consumption; Integrated circuit technology; MOSFETs; Propagation delay; Threshold voltage; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-2185-5
  • Electronic_ISBN
    978-1-4244-2186-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2008.4734996
  • Filename
    4734996