DocumentCode
2154504
Title
Low-power carry look-ahead adder with multi-threshold voltage CMOS technology
Author
Dong Whee Kim ; Kim, Jeong Beom
Author_Institution
Samsung SDI Co., Ltd., South Korea
fYear
2008
fDate
20-23 Oct. 2008
Firstpage
2160
Lastpage
2163
Abstract
Multi-threshold CMOS (MTCMOS) technology provides the transistors that have low-, normal-, and high-threshold voltage. This paper describes a low-power carry look-ahead adder with MTCMOS technology. While the low-threshold voltage transistors are used to reduce the propagation delay time in the critical path, the high-threshold voltage transistors are used to reduce the power consumption in the shortest path. Comparing with the conventional CMOS circuit, the circuit is achieved to reduce the power consumption by 14.71% and the power-delay-product by 16.11%. This circuit is designed with Samsung 0.35 um CMOS process. The validity and effectiveness are verified through the HSPICE simulation.
Keywords
CMOS digital integrated circuits; SPICE; adders; transistors; HSPICE simulation; MTCMOS technology; Samsung CMOS process; high-threshold voltage transistors; low-power carry look-ahead adder; low-threshold voltage transistors; multi-threshold voltage CMOS technology; propagation delay time; Adders; CMOS technology; Circuit simulation; Circuit synthesis; Energy consumption; Integrated circuit technology; MOSFETs; Propagation delay; Threshold voltage; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-2185-5
Electronic_ISBN
978-1-4244-2186-2
Type
conf
DOI
10.1109/ICSICT.2008.4734996
Filename
4734996
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