Observation of electronic band-structure modification in microtubed quantum well

Author

Kishimoto, Y. ; Saravanan, S. ; Kubota, K. ; Vaccaro, P. ; Sato, M. ; Ocampo, J. M Zanardi ; Aida, T. ; Ohtani, N. ; Hosoda, M.

Author_Institution

Osaka City Univ., Japan

fYear

2002

fDate

11-13 Dec. 2002

Firstpage

315

Lastpage

318

Abstract

A semiconductor quantum-well (QW) microtube was fabricated by rolling up an approximately 40-nm thick semiconductor layer containing a narrow-width QW. Subband energy modification in the QW microtube was studied by the change in the photoluminescence properties before and after the layer was rolled up into the microtube. We observed type-II to type-I transition in the electronic subband structure due to the strain effect in the microtube.

Keywords

band structure; electronic structure; nanotechnology; photoluminescence; semiconductor quantum wells; semiconductor thin films; visible spectra; 40 nm; 40-nm thick semiconductor layer; QW microtube; electronic band-structure modification; electronic subband structure; microtubed quantum well; narrow-width QW; photoluminescence properties; semiconductor quantum-well microtube; strain effect; subband energy modification; Capacitive sensors; Cities and towns; Gallium arsenide; Laboratories; Molecular beam epitaxial growth; Optical films; Quantum wells; Scanning electron microscopy; Semiconductor films; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

ISSN

1097-2137

Print_ISBN

0-7803-7571-8

Type

conf

DOI

10.1109/COMMAD.2002.1237254

Filename

1237254