Title :
Observation of electronic band-structure modification in microtubed quantum well
Author :
Kishimoto, Y. ; Saravanan, S. ; Kubota, K. ; Vaccaro, P. ; Sato, M. ; Ocampo, J. M Zanardi ; Aida, T. ; Ohtani, N. ; Hosoda, M.
Author_Institution :
Osaka City Univ., Japan
Abstract :
A semiconductor quantum-well (QW) microtube was fabricated by rolling up an approximately 40-nm thick semiconductor layer containing a narrow-width QW. Subband energy modification in the QW microtube was studied by the change in the photoluminescence properties before and after the layer was rolled up into the microtube. We observed type-II to type-I transition in the electronic subband structure due to the strain effect in the microtube.
Keywords :
band structure; electronic structure; nanotechnology; photoluminescence; semiconductor quantum wells; semiconductor thin films; visible spectra; 40 nm; 40-nm thick semiconductor layer; QW microtube; electronic band-structure modification; electronic subband structure; microtubed quantum well; narrow-width QW; photoluminescence properties; semiconductor quantum-well microtube; strain effect; subband energy modification; Capacitive sensors; Cities and towns; Gallium arsenide; Laboratories; Molecular beam epitaxial growth; Optical films; Quantum wells; Scanning electron microscopy; Semiconductor films; Substrates;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
Print_ISBN :
0-7803-7571-8
DOI :
10.1109/COMMAD.2002.1237254
