DocumentCode
2154580
Title
Very low temperature MBE process for SiGe and Si device structures
Author
Kasper, E. ; Dambkes, H. ; Luy, J.
Author_Institution
AEG Res. Center, Ulm, West Germany
fYear
1988
fDate
11-14 Dec. 1988
Firstpage
558
Lastpage
561
Abstract
The growth and doping of Si and SiGe layers on Si substrates were investigated by molecular beam epitaxy (Si-MBE). Growth took place at temperatures below the standard Si-MBE process regime (<550 degrees C). The lowest epitaxial temperature achieved was 140 degrees C. Results on matrix growth, metastability of strained-layer SiGe, and doping are given, and the structure and characteristics of two hetero-devices (MODFET and resonant tunneling element) are examined.<>
Keywords
Ge-Si alloys; elemental semiconductors; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor junctions; semiconductor materials; silicon; 140 to 550 C; HEMT; MODFET; Si substrate; Si-Si homoepitaxy; SiGe-Si heteroepitaxy; lattice mismatch; low temperature MBE process; matrix growth; metastability of strained-layer; molecular beam epitaxy; resonant tunneling element; Doping; Germanium silicon alloys; HEMTs; MODFETs; Metastasis; Molecular beam epitaxial growth; Resonant tunneling devices; Silicon germanium; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1988.32876
Filename
32876
Link To Document