Title :
An ECL gate array with Si HBTs
Author :
Fujioka, H. ; Deguchi, T. ; Takasaki, K. ; Takada, T.
Author_Institution :
Fujitsu Ltd., Kawasaki, Japan
Abstract :
A 400-gate ECL (emitter coupled logic) gate array with mu c-Si:H HBTs (heterojunction bipolar transistors) has been fabricated for the first time in a way compatible with present Si bipolar technology. A basic circuit delay of 295 ps at 6.5 mW/gate power dissipation has been obtained. This device can be operated even at low temperatures. Several problems that still remain include the thermal stability of the hydrogen, external base resistance, and recombination current.<>
Keywords :
bipolar integrated circuits; elemental semiconductors; emitter-coupled logic; logic arrays; semiconductor technology; silicon; 295 ps; 400 gate logic array; 6.5 mW; ECL gate array; circuit delay; emitter coupled logic; external base resistance; heterojunction bipolar transistors; low temperatures; microcrystalline Si:H; power dissipation; recombination current; thermal stability; Circuit stability; Coupling circuits; Delay; Heterojunction bipolar transistors; Logic arrays; Logic devices; Logic gates; Power dissipation; Temperature; Thermal resistance;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32880
