DocumentCode
2154887
Title
High frequency 6000 V double gate GTOs
Author
Ogura, T. ; Nakagawa, A. ; Takigami, K. ; Atsuta, M. ; Kamei, Y.
Author_Institution
Toshiba Corp., Kawasaki, Japan
fYear
1988
fDate
11-14 Dec. 1988
Firstpage
610
Lastpage
613
Abstract
A double-gate GTO (gate turn-off thyristor), consisting of an n-buffer layer and a second gate on the n-buffer, has been developed to achieve low turn-off losses in high-blocking-voltage GTOs. A forward blocking voltage of 6000 V was realized, even at 150 degrees C, when the second gate was shorted to the anode electrode. Turn-on and turn-off switching power loss can be reduced to approximately 1/20 of that for a single-gate GTO by adjusting the time interval between the two gate pulse triggering times for the first and second gates.<>
Keywords
thyristors; 150 C; 6 kV; double-gate GTO; forward blocking voltage; gate turn-off thyristor; high frequency GTO; high-blocking-voltage GTOs; low turn-off losses; turn on switching power loss; turn-off switching power loss; Anodes; Electrodes; Frequency; Pulse width modulation inverters; Research and development; Space vector pulse width modulation; Switching loss; Temperature; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1988.32888
Filename
32888
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