The influence of gate-metallization potential drop on transient GTO characteristics

Author

Bleichner, H. ; Vobecky, J. ; Nordlander, E. ; Vojdani, F. ; Bakowski, M.

Author_Institution

Dept. of Electron., Uppsala Univ., Sweden

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

614

Lastpage

617

Abstract

A surveillance instrument has been developed for the measurement of the excess-carrier distribution in GTO (gate turn-off thyristor) samples at all stages of operation. The instrument, an optical scanner, allows the visualization of the measurements as 3-D maps of the distributions for time- and space-resolved inspections of the electrical behavior of the component. The optical scanner was used to investigate whether the gate-metallization pattern resistance would influence the transient characteristics of the GTO components. The findings clearly show a strong dependence of turn-off behavior on lateral gate-metallization potential drop in a two-fingered structure.<>

Keywords

electronic equipment testing; inspection; metallisation; thyristors; 3-D maps; electrical behavior; gate turn-off thyristor; gate-metallization pattern resistance; gate-metallization potential drop; optical scanner; space-resolved inspections; surveillance instrument; time resolved measurements; transient GTO characteristics; transient characteristics; turn-off behavior; two-fingered structure; visualization; Absorption; Cathodes; Distributed computing; Instruments; Laser beams; Optical devices; Optical surface waves; Performance evaluation; Surveillance; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32889

Filename

32889