Title :
A 60 V BiCDMOS device technology for automotive applications
Author :
Hamada, Kimimori ; Kawai, Fumiaki ; Kushida, Tomoyoshi ; Kawahashi, Akira
Author_Institution :
Electron. Eng. Div. IV, Toyota Motor Corp., Aichi, Japan
Abstract :
A new 60 V BiCDMOS device technology has been developed for specialized automotive applications. This technology merges a 7 V 2 μm CMOS process and a 7 V bipolar transistor process with a 60 V DMOS process. Bipolar transistors for 18 V and 35 V are also available without any additional process steps. In addition, it includes a multithickness metal process which permits the use of a thin patterned metal layer over the signal parts for high packing density and a thick metal layer over the power parts for low voltage drop. With the availability of this multithickness metal process, chip size can be reduced
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; MOSFET; automotive electronics; integrated circuit packaging; power MOSFET; power bipolar transistors; power integrated circuits; 18 V; 2 mum; 35 V; 60 V; 7 V; BiCDMOS power transistor; CMOS process; DMOS process; automotive applications; bipolar transistor process; chip size; device technology; multithickness metal process; packing density; power ICs; thin patterned metal layer; voltage drop; Automotive applications; Automotive engineering; Bipolar transistors; CMOS logic circuits; CMOS process; CMOS technology; Costs; Logic devices; Power system reliability; Signal processing;
Conference_Titel :
Industry Applications Conference, 1995. Thirtieth IAS Annual Meeting, IAS '95., Conference Record of the 1995 IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-3008-0
DOI :
10.1109/IAS.1995.530408
