Title :
On the n+-InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET)
Author :
Chuang, H.M. ; Lin, K.W. ; Chen, C.Y. ; Chen, J.Y. ; Kao, C.I. ; Liu, W.C.
Author_Institution :
Inst. of Microelectron., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
An interesting n+-InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET) is fabricated and studied. In the n+-InGaAs/n-GaAs CDC structure, the narrow InGaAs layer is used to introduce the channel quantization effect. Thus, the effective energy-gap of InGaAs channel can be increased. In addition, the n-GaAs channel can improve the operation capability under higher electric field. Therefore, the impact ionization effect can be avoided. Experimentally, the studied device shows good DC and microwave dc performances with flat and wide operation regime.
Keywords :
III-V semiconductors; energy gap; gallium arsenide; impact ionisation; indium compounds; microwave field effect transistors; nanotechnology; semiconductor heterojunctions; CDC-HFET; InGaAs channel; InGaAs layer; InGaAs-GaAs; channel quantization effect; dc performances; effective energy-gap; impact ionization effect; microwave performances; n-GaAs channel; n+-InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor; Breakdown voltage; Gallium arsenide; HEMTs; Impact ionization; Indium gallium arsenide; Leakage current; MODFETs; Microwave transistors; Performance gain; Temperature measurement;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
Print_ISBN :
0-7803-7571-8
DOI :
10.1109/COMMAD.2002.1237265
