DocumentCode :
2154958
Title :
Morphology and electrical properties of ultra thin PTFE film prepared with RF sputtering
Author :
Ochiai, S. ; Kato, T. ; Maeda, A. ; Ieda, Mirai ; Mizutani, T.
Author_Institution :
Dept. of Electr. Eng., Aichi Inst. of Technol., Toyota, Japan
Volume :
1
fYear :
1994
fDate :
3-8 Jul 1994
Firstpage :
215
Abstract :
PTFE (polytetrafluoroethylene) film is an excellent insulating material. It also has good hydrophobicity and superior chemical stability. But it is difficult to make good thin films (thickness<10 μm). We have obtained ultra thin film (thickness<1 μm) with the RF sputtering method. The electric strength of 7.9 nm-thick film is about 7 MV/cm which is much higher than that of a conventional PTFE film. The conduction currents may be Schottky type in a high field region. The contact angle of an thin PTFE film is the almost same as that of a conventional PTFE film and it is 100° at a room temperature. This also means that the morphology of the ultra thin PTFE film (thin PTFE film) is similar to that a conventional PTFE film. The results of the electron spectroscopy for chemical analysis (ESCA) and the X ray diffraction revealed the thin PTFE film is an amorphous rich compound polymer
Keywords :
Chemicals; Electrons; Insulation; Morphology; Polymer films; Radio frequency; Spectroscopy; Sputtering; Stability; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Properties and Applications of Dielectric Materials, 1994., Proceedings of the 4th International Conference on
Conference_Location :
Brisbane, Qld.
Print_ISBN :
0-7803-1307-0
Type :
conf
DOI :
10.1109/ICPADM.1994.413977
Filename :
413977
Link To Document :
بازگشت