Title :
Evaluation of diffusion barrier layers in Cu interconnects
Author :
Prasad, K. ; Yuan, X.L. ; Li, C.Y. ; Kumar, Rakesh
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Abstract :
In this paper, we compare the experimental results on the suitability of oxygen or nitrogen containing SiC (SiCO or SiCN) with conventional SiN as a capping layer to prevent Cu diffusion into interlevel dielectric (ILD) layer in a typical Cu based interconnect structure. In addition to reducing the dielectric constant (k) value of the barrier, SiCN and SiCO show comparable performance in terms of preventing the Cu diffusion as well as offering good dielectric breakdown strength.
Keywords :
copper; copper compounds; dielectric thin films; diffusion barriers; electric breakdown; optical interconnections; permittivity; silicon compounds; Cu based interconnect structure; Cu diffusion; Cu-SiCN; Cu-SiCO; Cu-SiN; capping layer; dielectric breakdown strength; dielectric constant; diffusion barrier layers; interlevel dielectric layer; nitrogen containing SiC; oxygen containing SiC; Adhesives; Conductivity; Copper; Dielectric constant; Dielectric materials; Nitrogen; Resists; Semiconductor films; Silicon carbide; Silicon compounds;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
Print_ISBN :
0-7803-7571-8
DOI :
10.1109/COMMAD.2002.1237268
