Improvement of buried oxide integrity in ITOX SIMOX wafers

Author

Ando, M. ; Miyamura, Y. ; Jablonski, J. ; Saito, M. ; Fitagawa, S. ; Katayama, T.

Author_Institution

Komatsu Electron. Metals Co. Ltd., Kanagawa, Japan

fYear

1997

fDate

6-9 Oct 1997

Firstpage

12

Lastpage

13

Abstract

Low-dose SIMOX wafers are very encouraging for fabrication of SOI ULSI devices because of their better crystalline quality and higher wafer production throughput compared with high-dose SIMOX wafers. However, as the buried oxide (BOX) layer becomes thinner, it is generally more difficult to fulfill severe requirements concerning the BOX integrity. This is because the breakdown of the thin BOX is caused by Si pipes and Si islands, which are left in the buried layer during SIMOX manufacturing. In this paper we present the results of electrical evaluation of the buried oxide layers synthesized with doses from 2.7 to 3.5 X 10¹⁷ cm^-2

Keywords

MOS integrated circuits; SIMOX; ULSI; insulating thin films; ion implantation; oxidation; BOX integrity; ITOX SIMOX wafers; SOI ULSI devices; Si; buried oxide integrity; crystalline quality; islands; pipes; wafer production throughput; Capacitors; Crystallization; Dielectric substrates; Electric breakdown; Electrodes; Fabrication; Oxidation; Semiconductor films; Silicon; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1997. Proceedings., 1997 IEEE International

Conference_Location

Fish Camp, CA

ISSN

1078-621X

Print_ISBN

0-7803-3938-X

Type

conf

DOI

10.1109/SOI.1997.634908

Filename

634908