A Multilayer Integration Technique for Low-loss, Low-crosstalk Interconnects and Circuits for RF Silicon MMICs

Author

DeVincentis, Marc ; Kim, Juno ; Qian, Yongxi ; Feng, Guojin ; Ma, Pingxi ; Chang, M.Frank ; Itoh, Tatsuo

Author_Institution

Electrical Engineering Department, University of California, Los Angeles, Los Angeles, CA 90095-1594, USA. Phone: (310)206-1024, Fax: (310)206-4819, Email: marcd@ee.ucla.edu

fYear

2000

fDate

Oct. 2000

Firstpage

1

Lastpage

4

Abstract

This paper reports our latest progress in developing the Silicon/Metal/Polyimide (SIMPOL) architecture for high-performance RF interconnects. This 3D MMIC process utilizes polyimide for an interlayer dielectric on low-resistivity CMOS-grade silicon substrates. The SIMPOL structure exhibits low noise-crosstalk (<Â¿80dB up to 18GHz and <Â¿40dB up to 50GHz) along with excellent insertion loss (<Â¿0.25dB/mm up to 45GHz). A branch line coupler was implemented and a bandpass filter was designed at 37 GHz using the SIMPOL process. The results demonstrate the multilayer capability, superior performance, and applicability of SIMPOL to advanced millimeter-wave wireless communication systems.

Keywords

Band pass filters; Circuit noise; Dielectric substrates; Insertion loss; Integrated circuit interconnections; MMICs; Nonhomogeneous media; Polyimides; Radio frequency; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2000. 30th European

Conference_Location

Paris, France

Type

conf

DOI

10.1109/EUMA.2000.338760

Filename

4139773