Schottky diodes with thin film diamond base

Schottky diodes were fabricated using metal contacts to thin diamond films obtained by a plasma-enhanced chemical vapor deposition process. The diamond structure of the films was confirmed by X-ray diffraction patterns and Raman scattering spectra. Internal photoemission measurements were used to determine a barrier height of about 1.13 eV for both Au and Al contacts to p-type diamond films. Rectifying diode characteristics were obtained at both room and elevated temperatures with the breakdown voltage exceeding 200 V at 300 K. It is shown that both static and small-signal characteristics of Schottky diodes with a thin diamond base are controlled by deep acceptor centers and are essentially the same as for their counterparts fabricated using bulk diamond.<>