Sub-quarter-micrometer-like V-gate pseudomorphic doped-channel FETs

Author

Tan, S.W. ; Chen, W.T. ; Chu, M.Y. ; Lour, W.S.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan-Ocean Univ., Keelung, Taiwan

fYear

2002

fDate

11-13 Dec. 2002

Firstpage

385

Lastpage

388

Abstract

This paper reported two reliable and economical methods that one is the using of spin on glass together with re-flowing photoresist to implement 0.4∼1.5-μm U-gate HDCFETs, the other is to employ the wet etching rule to obtain the Sub-quarter-micrometer-like V-gate DCFETs. The measured transconductance available are 225, 250, 275, and 350 mS/mm for a V-gate, 1.5-μm, 1.0-μm and 0.6-μm U-gate devices, respectively. The measured f_t (f_max) at V_GS=0 V and V_DS=4 V are 22.5(33.5), 16(25), 9.7(20.5), and 7(14) GHz for a V-gate, 1.5-μm, 1.0-μm and 0.6-μm U-gate devices.

Keywords

electric admittance; etching; microwave field effect transistors; nanotechnology; photoresists; 0 V; 0.6 mum; 0.6-μm U-gate devices; 1.0 mum; 1.0-μm U-gate devices; 1.5 mum; 1.5-μm U-gate devices; 14 GHz; 16 GHz; 20.5 GHz; 22.5 GHz; 25 GHz; 33.5 GHz; 4 V; 7 GHz; 9.7 GHz; U-gate HDCFET; heterostructure doped-channel field-effect transistors; reflowing photoresist; subquarter-micrometer-like V-gate pseudomorphic doped-channel FETs; transconductance; wet etching rule; FETs; Gallium arsenide; Glass; High power amplifiers; Indium gallium arsenide; Lithography; Optical buffering; Optical device fabrication; Resists; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

ISSN

1097-2137

Print_ISBN

0-7803-7571-8

Type

conf

DOI

10.1109/COMMAD.2002.1237271

Filename

1237271