DocumentCode :
2155120
Title :
10-GHz AlGaInAs/InP 1.55 μm passively mode-locked laser with low divergence angle and timing jitter
Author :
Hou, Lianping ; Haji, Mohsin ; Marsh, John H. ; Bryce, A. Catrina
Author_Institution :
Sch. of Eng., Univ. of Glasgow, Glasgow, UK
fYear :
2011
fDate :
18-22 Sept. 2011
Firstpage :
1
Lastpage :
3
Abstract :
A novel 10-GHz passively mode-locked AlGaInAs/InP 1.55 μm laser was demonstrated with a low divergence angle (14.7° × 27.3°), a timing jitter of 194 fs (4-80 MHz), and an RF linewidth of 2 kHz.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser mode locking; quantum well lasers; timing jitter; AlGaInAs-InP; RF linewidth; frequency 10 GHz; frequency 4 MHz to 80 MHz; low divergence angle; passively mode-locked laser; timing jitter; wavelength 1.55 mum; Laser mode locking; Optical device fabrication; Optical waveguides; Radio frequency; Semiconductor lasers; Timing jitter; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Communication (ECOC), 2011 37th European Conference and Exhibition on
Conference_Location :
Geneva
ISSN :
Pending
Print_ISBN :
978-1-4577-1918-9
Type :
conf
Filename :
6065829
Link To Document :
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