DocumentCode
2155120
Title
10-GHz AlGaInAs/InP 1.55 μm passively mode-locked laser with low divergence angle and timing jitter
Author
Hou, Lianping ; Haji, Mohsin ; Marsh, John H. ; Bryce, A. Catrina
Author_Institution
Sch. of Eng., Univ. of Glasgow, Glasgow, UK
fYear
2011
fDate
18-22 Sept. 2011
Firstpage
1
Lastpage
3
Abstract
A novel 10-GHz passively mode-locked AlGaInAs/InP 1.55 μm laser was demonstrated with a low divergence angle (14.7° × 27.3°), a timing jitter of 194 fs (4-80 MHz), and an RF linewidth of 2 kHz.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser mode locking; quantum well lasers; timing jitter; AlGaInAs-InP; RF linewidth; frequency 10 GHz; frequency 4 MHz to 80 MHz; low divergence angle; passively mode-locked laser; timing jitter; wavelength 1.55 mum; Laser mode locking; Optical device fabrication; Optical waveguides; Radio frequency; Semiconductor lasers; Timing jitter; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Communication (ECOC), 2011 37th European Conference and Exhibition on
Conference_Location
Geneva
ISSN
Pending
Print_ISBN
978-1-4577-1918-9
Type
conf
Filename
6065829
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