Modeling arsenic redistribution during titanium silicide formation

Author

Taylor, R.G. ; Salama, C.A.T. ; Ratnam, P. ; Naem, A.

Author_Institution

Dept. of Electr. Eng., Toronto Univ., Ont., Canada

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

644

Lastpage

647

Abstract

A novel double-moving-boundary approach to modeling arsenic redistribution during titanium silicide formation over shallow junctions is presented. Arsenic redistribution is modeled by segregation across the TiSi/sub 2//Si interface, rapid diffusion in the TiSi/sub 2/ layer, and evaporation at the TiSi/sub 2/ surface. Physical models for each redistribution mechanism are implemented in process simulation, and the main parameters are extracted by comparing simulations to experimental secondary ion mass spectrometry (SIMS) profiles of arsenic in the TiSi/sub 2//Si structure. It is concluded that the approach allows accurate extraction of the specific contact resistivity after TiSi/sub 2/ contact formation to shallow junctions commonly encountered in micron and submicron silicon device technology.<>

Keywords

arsenic; diffusion in solids; field effect integrated circuits; integrated circuit technology; metallisation; secondary ion mass spectra; semiconductor-metal boundaries; titanium compounds; As redistribution modeling; SIMS; TiSi/sub 2/ contact formation; TiSi/sub 2/-SiAs; double-moving-boundary approach; evaporation; modeling; process simulation; rapid diffusion; redistribution mechanism; salicides; secondary ion mass spectrometry; shallow junctions; silicides formation; specific contact resistivity; submicron Si device technology; Contact resistance; Degradation; Equations; Iron; Mass spectroscopy; Silicides; Silicon; Surface resistance; Telecommunications; Titanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32896

Filename

32896