Title :
Modeling arsenic redistribution during titanium silicide formation
Author :
Taylor, R.G. ; Salama, C.A.T. ; Ratnam, P. ; Naem, A.
Author_Institution :
Dept. of Electr. Eng., Toronto Univ., Ont., Canada
Abstract :
A novel double-moving-boundary approach to modeling arsenic redistribution during titanium silicide formation over shallow junctions is presented. Arsenic redistribution is modeled by segregation across the TiSi/sub 2//Si interface, rapid diffusion in the TiSi/sub 2/ layer, and evaporation at the TiSi/sub 2/ surface. Physical models for each redistribution mechanism are implemented in process simulation, and the main parameters are extracted by comparing simulations to experimental secondary ion mass spectrometry (SIMS) profiles of arsenic in the TiSi/sub 2//Si structure. It is concluded that the approach allows accurate extraction of the specific contact resistivity after TiSi/sub 2/ contact formation to shallow junctions commonly encountered in micron and submicron silicon device technology.<>
Keywords :
arsenic; diffusion in solids; field effect integrated circuits; integrated circuit technology; metallisation; secondary ion mass spectra; semiconductor-metal boundaries; titanium compounds; As redistribution modeling; SIMS; TiSi/sub 2/ contact formation; TiSi/sub 2/-SiAs; double-moving-boundary approach; evaporation; modeling; process simulation; rapid diffusion; redistribution mechanism; salicides; secondary ion mass spectrometry; shallow junctions; silicides formation; specific contact resistivity; submicron Si device technology; Contact resistance; Degradation; Equations; Iron; Mass spectroscopy; Silicides; Silicon; Surface resistance; Telecommunications; Titanium;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32896
