Distributed effects in high power RF LDMOS transistors

Author

Goverdhanam, Kavita ; Dai, Wenhua ; Frei, Michel ; Farrell, Don ; Bude, Jeff ; Safar, Hugo ; Mastrapasqua, M. ; Bambridge, Tim

Author_Institution

Agere Syst., Allentown, PA, USA

fYear

2005

fDate

12-17 June 2005

Abstract

This paper focuses on the effects of distributed RF transmission lines on performance aspects, such as, gain, output power, efficiency etc. in high power RF LDMOS amplifiers. The methodology to model and capture the distributed effects is discussed. Suitable alternatives to mitigate power loss due to distributive effects in large transistors are presented. Also, the contributions of the package to the overall device performance are addressed.

Keywords

MMIC amplifiers; power MOSFET; semiconductor device models; transmission lines; RF LDMOS amplifiers; device performance; distributed RF transmission lines; distributed effects; high power RF LDMOS transistors; large transistors; power loss mitigation; Loss measurement; Packaging; Power amplifiers; Power generation; Power measurement; Radio frequency; Radiofrequency amplifiers; Rails; Topology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2005 IEEE MTT-S International

ISSN

01490-645X

Print_ISBN

0-7803-8845-3

Type

conf

DOI

10.1109/MWSYM.2005.1516744

Filename

1516744

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2155203