Title :
Improving ITOX conditions for low defect density and BOX breakdown
Author :
Schwank, J.R. ; Anc, M.J. ; Shaneyfelt, M.R. ; Draper, B.L. ; Meisenheimer, T.L. ; Warren, W.L. ; Vanheusden, K. ; Fleetwood, D.M. ; Schanwald, L.P.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
A narrow dose-energy process window exists for the formation of high-quality low dose SIMOX layers. Process instabilities require annealing schemes that enlarge the process window to improve manufacturability. As recently shown, the integrity of thin buried oxides has been improved by annealing in a highly oxidizing ambient. In this work, we extend the investigations to the effects of high temperature oxidation on the integrity and radiation hardness of the thin BOX SIMOX implanted with doses from the extreme ends of the process window. In addition, we explore the effects of moderate temperature H 2 anneals on BOX integrity
Keywords :
SIMOX; annealing; buried layers; electric breakdown; ion implantation; oxidation; radiation hardening (electronics); BOX integrity; H2; H2 annealing; ITOX; Si-SiO2; breakdown; buried oxide; defect density; high temperature oxidation; ion implantation; low dose SIMOX; manufacturability; process window; radiation hardness; Annealing; Capacitors; Electric breakdown; Hydrogen; Implants; Laboratories; Leakage current; Oxidation; Silicon; Temperature;
Conference_Titel :
SOI Conference, 1997. Proceedings., 1997 IEEE International
Conference_Location :
Fish Camp, CA
Print_ISBN :
0-7803-3938-X
DOI :
10.1109/SOI.1997.634909
