Title :
Ion channelling and Raman scattering study of self-implanted silicon
Author :
Johnson, B.C. ; McCallum, J.C.
Author_Institution :
Sch. of Phys., Melbourne Univ., Vic., Australia
Abstract :
Ion channeling and Raman spectroscopy techniques were used to investigate ion-beam damage created by implantation of 245 keV and 5.5 MeV Si+ into Si(100). The two techniques employed in this work are compared and are shown to be complimentary with Raman scattering being more sensitive to low damage concentrations. The spatial correlation model is also discussed.
Keywords :
Raman spectra; channelling; elemental semiconductors; ion beam effects; ion implantation; semiconductor doping; silicon; 245 keV; 5.5 MeV; Raman scattering; Si:Si; ion channelling; ion-beam damage; self-implanted silicon; spatial correlation model; Australia; Backscatter; Crystallography; Laser beams; Physics; Raman scattering; Semiconductor device modeling; Silicon; Skin; Spectroscopy;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
Print_ISBN :
0-7803-7571-8
DOI :
10.1109/COMMAD.2002.1237282
