DocumentCode
2155269
Title
Ion channelling and Raman scattering study of self-implanted silicon
Author
Johnson, B.C. ; McCallum, J.C.
Author_Institution
Sch. of Phys., Melbourne Univ., Vic., Australia
fYear
2002
fDate
11-13 Dec. 2002
Firstpage
429
Lastpage
432
Abstract
Ion channeling and Raman spectroscopy techniques were used to investigate ion-beam damage created by implantation of 245 keV and 5.5 MeV Si+ into Si(100). The two techniques employed in this work are compared and are shown to be complimentary with Raman scattering being more sensitive to low damage concentrations. The spatial correlation model is also discussed.
Keywords
Raman spectra; channelling; elemental semiconductors; ion beam effects; ion implantation; semiconductor doping; silicon; 245 keV; 5.5 MeV; Raman scattering; Si:Si; ion channelling; ion-beam damage; self-implanted silicon; spatial correlation model; Australia; Backscatter; Crystallography; Laser beams; Physics; Raman scattering; Semiconductor device modeling; Silicon; Skin; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
ISSN
1097-2137
Print_ISBN
0-7803-7571-8
Type
conf
DOI
10.1109/COMMAD.2002.1237282
Filename
1237282
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