DocumentCode
2155319
Title
W-band metamorphic HEMT with 267 mW output power
Author
Herrick, Katherine J. ; Brown, Kenneth W. ; Rose, Frederick A. ; Whelan, Colin S. ; Kotce, Jeffrey ; LaRoche, Jeffrey R. ; Zhang, Yiwen
Author_Institution
Raytheon RF Components, Andover, MA, USA
fYear
2005
fDate
12-17 June 2005
Abstract
This paper reports the highest W-band power output of metamorphic HEMT (MHEMT) technology to date. 267 mW single stage performances at 90 GHz are achieved on a 0.15 micron GaAs-based production line with improved manufacturability over InP HEMT. The single stage circuits presented here are building blocks for future MHEMT power amplifier development.
Keywords
III-V semiconductors; field effect MIMIC; gallium arsenide; millimetre wave power amplifiers; power HEMT; power integrated circuits; 0.15 micron; 267 mW; 90 GHz; GaAs; MHEMT power amplifier; W-band HEMT; metamorphic HEMT; millimeter wave amplifiers; single stage circuits; Etching; Gallium arsenide; Gold; HEMTs; Indium phosphide; Millimeter wave technology; Power amplifiers; Power generation; Substrates; mHEMTs;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2005 IEEE MTT-S International
ISSN
01490-645X
Print_ISBN
0-7803-8845-3
Type
conf
DOI
10.1109/MWSYM.2005.1516748
Filename
1516748
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