DocumentCode :
2155325
Title :
A deep level transient spectroscopy study of vacancy-related defect profiles in channeled ion implanted silicon
Author :
Lay, M.D.H. ; McCallum, J.C. ; de M Azevedo, G. ; Deenapanray, P.N.K. ; Jagadish, C.
Author_Institution :
Sch. of Phys., Melbourne Univ., Vic., Australia
fYear :
2002
fDate :
11-13 Dec. 2002
Firstpage :
437
Lastpage :
440
Abstract :
The effect of implantation angle on the profile of vacancy-related defects, represented by the divacancy and vacancy-phosphorus centres, in n-type <100> Cz-Si implanted with 450 keV P or 600 keV Si ions to a dose of 2 × 10-9 ions·cm-2 , has been examined using deep level transient spectroscopy depth profiling. Implants were performed with samples aligned with 10° twists from the [110] planar direction and various tilts from the <100> axis. The peak depth of the VP/V2 profile exhibits a systematic variation with the implantation angle: shifting towards the surface, narrowing and increasing in peak concentration as the implantation angle is progressively varied from the aligned direction. For well-channeled 450 keV P ions, the peak in the defect profile is approximately 0.9 microns deeper than the peak in the vacancy profile predicted using the binary collision codes MARLOWE and Crystal-TCAS. The effect of the surface proximity on defect concentrations has been considered by comparing those profiles obtained for 450 keV P implanted samples with those of 600 keV Si implanted samples.
Keywords :
channelling; crystal growth from melt; deep level transient spectroscopy; elemental semiconductors; ion implantation; phosphorus; semiconductor growth; silicon; vacancies (crystal); 450 keV; 600 keV; Crystal-TCAS code; Si:P; Si:Si; binary collision code MARLOWE; channeled ion implanted silicon; deep level transient spectroscopy; divacancy; implantation angle; surface proximity; vacancy-phosphorus centres; vacancy-related defect profiles; Electronic mail; Implants; Ion beams; Ion implantation; Laser beams; Paints; Physics computing; Quantum computing; Silicon; Spectroscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
ISSN :
1097-2137
Print_ISBN :
0-7803-7571-8
Type :
conf
DOI :
10.1109/COMMAD.2002.1237284
Filename :
1237284
Link To Document :
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