Title :
Intersubband absorption in GaInNAs/GaAsN quantum wells
Author :
Fan, W.J. ; Sun, L. ; Yoon, S.F. ; Zhang, D.H. ; Wang, S.Z. ; Mei, T. ; Lee, P.L.
Author_Institution :
Nanyang Technol. Univ., Singapore
Abstract :
Intersubband absorption, high-resolution X-ray diffraction and photoluminescence were investigated in the n-type Ga0.7In0.3N0.01As0.99/GaAs0.998N0.002 quantum wells grown by solid-source molecular beam epitaxy (SSMBE). The bound-to-continuum absorption peaks at around 9.5 μm were observed in both as-grown and in-situ annealed samples. The effective mass theory was also carried out to calculate the intersubband absorption in the GalnNAs/GaAsN QWs. The experimental absorption curve is in good agreement with our calculation result.
Keywords :
III-V semiconductors; X-ray diffraction; annealing; effective mass; gallium arsenide; indium compounds; infrared spectra; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor heterojunctions; semiconductor quantum wells; wide band gap semiconductors; Ga0.7In0.3N0.01As0.99-GaAs0.998N0.002; GaInNAs/GaAsN quantum wells; SSMBE; X-ray diffraction; annealing; bound-to-continuum absorption peaks; effective mass theory; intersubband absorption; photoluminescence; solid-source molecular beam epitaxy; Annealing; Electromagnetic wave absorption; Gallium arsenide; Infrared spectra; Nitrogen; Photodetectors; Photoluminescence; Plasma sources; Sun; Temperature measurement;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
Print_ISBN :
0-7803-7571-8
DOI :
10.1109/COMMAD.2002.1237288
