Title :
High Power and High External Efficiency m-Plane InGaN LEDs
Author :
Schmidt, M.C. ; Kim, K.C. ; Sato, H. ; Fellows, N. ; Masui, H. ; Nakamura, S. ; DenBaars, S.P. ; Speck, J.S.
Author_Institution :
California Univ., Santa Barbara
Abstract :
In this paper, we report on the growth and fabrication of high power and high efficiency nonpolar m-plane (11 macr00) nitride light emitting diodes (LEDs) on low defect density bulk m-plane GaN substrates. The LEDs were grown by MOCVD on free-standing bulk m -plane GaN. All MOCVD growth was performed at atmospheric pressure, at typical V/III ratios (>3000), and at typical temperature ranges (875 to 1185degC). Standard processing was used to fabricate the LEDs. After device fabrication, the LEDs were diced and packaged using standard die and wire bonding techniques and then molded with epoxy.
Keywords :
MOCVD coatings; gallium compounds; indium compounds; lead bonding; light emitting diodes; semiconductor growth; wide band gap semiconductors; MOCVD; die bonding; high power LED; nonpolar m-plane nitride light emitting diodes; wire bonding; Charge carrier processes; Electron emission; Fabrication; Gallium nitride; Light emitting diodes; MOCVD; Packaging; Piezoelectric polarization; Power generation; Temperature;
Conference_Titel :
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-0931-0
Electronic_ISBN :
978-1-4244-0931-0
DOI :
10.1109/CLEOE-IQEC.2007.4386168
