High Power and High External Efficiency m-Plane InGaN LEDs

Author

Schmidt, M.C. ; Kim, K.C. ; Sato, H. ; Fellows, N. ; Masui, H. ; Nakamura, S. ; DenBaars, S.P. ; Speck, J.S.

Author_Institution

California Univ., Santa Barbara

fYear

2007

fDate

17-22 June 2007

Firstpage

1

Lastpage

1

Abstract

In this paper, we report on the growth and fabrication of high power and high efficiency nonpolar m-plane (11 macr00) nitride light emitting diodes (LEDs) on low defect density bulk m-plane GaN substrates. The LEDs were grown by MOCVD on free-standing bulk m -plane GaN. All MOCVD growth was performed at atmospheric pressure, at typical V/III ratios (>3000), and at typical temperature ranges (875 to 1185degC). Standard processing was used to fabricate the LEDs. After device fabrication, the LEDs were diced and packaged using standard die and wire bonding techniques and then molded with epoxy.

Keywords

MOCVD coatings; gallium compounds; indium compounds; lead bonding; light emitting diodes; semiconductor growth; wide band gap semiconductors; MOCVD; die bonding; high power LED; nonpolar m-plane nitride light emitting diodes; wire bonding; Charge carrier processes; Electron emission; Fabrication; Gallium nitride; Light emitting diodes; MOCVD; Packaging; Piezoelectric polarization; Power generation; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-0931-0

Electronic_ISBN

978-1-4244-0931-0

Type

conf

DOI

10.1109/CLEOE-IQEC.2007.4386168

Filename

4386168