DocumentCode
2155468
Title
Evaluation of modern IGBT-modules for hard-switched AC/DC/AC converters
Author
Blaabjerg, Frede ; Pedersen, John K. ; Jaeger, Ulrik
Author_Institution
Inst. of Energy Technol., Aalborg Univ., Denmark
Volume
2
fYear
1995
fDate
8-12 Oct 1995
Firstpage
997
Abstract
The development of IGBT devices is still moving ahead producing faster devices with lower losses. The applications become more advanced, such as a complete hard-switched AC/DC/AC power converter with almost clean input current and regenerating capabilities. This paper first focuses on a detailed characterization and comparison of eight different IGBT-modules representing state-of-the-art for both PT and NPT technologies. The voltage level of the devices is 1200 V and 1600 V/1700 V. The characterization is performed on an advanced measurement system which is briefly described. The characterization is based on static and dynamic tests for both IGBT and the diodes in the IGBT-modules at a junction temperature at 125°C. The comparison is first done directly based on conduction losses and switching losses, and later the measurements are used in a loss model for a complete AC/DC/AC power converter application. In the AC/DC/AC power converter the power losses are modelled, and different operating conditions are compared like different voltage levels in the DC-link. It is concluded dependent on operation conditions different devices will be preferable, but the high voltage devices have the highest losses even at a high operating voltage
Keywords
AC-AC power convertors; AC-DC power convertors; DC-AC power convertors; bipolar transistor switches; insulated gate bipolar transistors; losses; power bipolar transistors; power semiconductor switches; semiconductor device testing; switching circuits; 1200 V; 125 C; 1600 V; 1700 V; AC/DC/AC power converter; DC link; NPT technologies; PT technologies; applications; characterization; clean input current; conduction losses; diodes; dynamic tests; hard switching; measurement system; operating voltage; power IGBT modules; power losses; regenerating capabilities; state-of-the-art; static tests; switching losses; voltage levels; Analog-digital conversion; Diodes; Insulated gate bipolar transistors; Loss measurement; Performance evaluation; Power measurement; Switching loss; Temperature; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Conference, 1995. Thirtieth IAS Annual Meeting, IAS '95., Conference Record of the 1995 IEEE
Conference_Location
Orlando, FL
ISSN
0197-2618
Print_ISBN
0-7803-3008-0
Type
conf
DOI
10.1109/IAS.1995.530410
Filename
530410
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