DocumentCode :
2155526
Title :
Creation of SiGe-based SIMOX structures by low energy oxygen implantation
Author :
Ishikawa, Yukari ; Saito, T. ; Shibata, N. ; Fukatsu, S.
Author_Institution :
Japan Fine Ceramics Center, Nagoya, Japan
fYear :
1997
fDate :
6-9 Oct 1997
Firstpage :
16
Lastpage :
17
Abstract :
Summary form only given. An ultra thin, dislocation-free, SiGe virtual substrate on SiO2 has been demonstrated as a new class of SOI structure by using low energy oxygen implantation. SIMOX-based virtual substrates are expected to boost the electronic as well as optoelectronic potentials of Si/SiGe
Keywords :
Ge-Si alloys; SIMOX; integrated circuit technology; ion implantation; oxygen; semiconductor materials; semiconductor-insulator-semiconductor structures; substrates; SOI; SiGe virtual substrate; SiGe-SiO2-SiGe; SiGe-based SIMOX structures; dislocation-free substrate; low energy oxygen implantation; ultra thin virtual substrate; Annealing; Ceramics; Electron mobility; Germanium silicon alloys; Optical scattering; Oxygen; Silicon alloys; Silicon germanium; Substrates; Surface morphology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1997. Proceedings., 1997 IEEE International
Conference_Location :
Fish Camp, CA
ISSN :
1078-621X
Print_ISBN :
0-7803-3938-X
Type :
conf
DOI :
10.1109/SOI.1997.634910
Filename :
634910
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2155526
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