Title :
Optimized copper line aspect ratio by Monte Carlo method
Author :
Wang, Zhuo Van ; Du, Gang ; Kang, Jin Feng ; Xiao Yan Liu ; Han, Ruqi
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
The copper interconnect comes into nanometers with the scaling down of device dimension. At the same time, the resistivity is increasing and the characteristic gets worse. In our paper, an optimal aspect ratio (AR) for Cu-line is found by Monte-Carlo (MC) method so that we can get the optimized electric conductivity and improve the performance of interconnection.
Keywords :
Monte Carlo methods; copper; electrical conductivity; grain boundaries; nanoelectronics; optimisation; semiconductor device metallisation; semiconductor device models; semiconductor process modelling; surface roughness; Cu; Monte Carlo method; copper interconnects performance; grain boundary scattering; microelectronic device; optimized copper line aspect ratio; optimized electric conductivity; scaled down device dimension; surface roughness; Acoustic scattering; Conductivity; Copper; Electrons; Grain boundaries; Optimization methods; Phonons; Plasma simulation; Plasma temperature; Rough surfaces;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4735039
