Title :
Modelling spin polarized optoelectronic processes
Author :
Sun, H.B. ; de Oliveria, M.C.
Author_Institution :
Dept. of Phys., Queensland Univ., Brisbane, Qld., Australia
Abstract :
We model the spin polarized optoelectronic processes in a GaAs-based light emitting diode under injection of spin-filtered electrons. To describe the microscopic dynamics we derive the quantum Langevin equations for photon number and carrier numbers. The polarization degree of the light generated by light emitting diode is calculated and compared with the experiment results.
Keywords :
III-V semiconductors; electroluminescence; electron spin polarisation; gallium arsenide; light emitting diodes; light polarisation; magnetoelectronics; semiconductor device models; GaAs-based light emitting diode; carrier numbers; light polarization; photon number; quantum Langevin equations; spin polarized optoelectronic processes; spin-filtered electrons; Charge carrier processes; Electron emission; Equations; Fluctuations; Frequency; Light emitting diodes; Magnetic fields; Optical polarization; Physics; Reservoirs;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
Print_ISBN :
0-7803-7571-8
DOI :
10.1109/COMMAD.2002.1237294
