DocumentCode
2155618
Title
Modelling spin polarized optoelectronic processes
Author
Sun, H.B. ; de Oliveria, M.C.
Author_Institution
Dept. of Phys., Queensland Univ., Brisbane, Qld., Australia
fYear
2002
fDate
11-13 Dec. 2002
Firstpage
479
Lastpage
482
Abstract
We model the spin polarized optoelectronic processes in a GaAs-based light emitting diode under injection of spin-filtered electrons. To describe the microscopic dynamics we derive the quantum Langevin equations for photon number and carrier numbers. The polarization degree of the light generated by light emitting diode is calculated and compared with the experiment results.
Keywords
III-V semiconductors; electroluminescence; electron spin polarisation; gallium arsenide; light emitting diodes; light polarisation; magnetoelectronics; semiconductor device models; GaAs-based light emitting diode; carrier numbers; light polarization; photon number; quantum Langevin equations; spin polarized optoelectronic processes; spin-filtered electrons; Charge carrier processes; Electron emission; Equations; Fluctuations; Frequency; Light emitting diodes; Magnetic fields; Optical polarization; Physics; Reservoirs;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
ISSN
1097-2137
Print_ISBN
0-7803-7571-8
Type
conf
DOI
10.1109/COMMAD.2002.1237294
Filename
1237294
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