DocumentCode
2155640
Title
Properties of radiative recombination in GaAsN epilayers
Author
Sun, B.Q. ; Gal, M. ; Gao, Q. ; Tan, H.H. ; Jagadish, C.
Author_Institution
Sch. of Phys., New South Wales Univ., Sydney, NSW, Australia
fYear
2002
fDate
11-13 Dec. 2002
Firstpage
483
Lastpage
486
Abstract
In this short note, we suggest that the radiative recombination in GaAsN epilayers takes place between localized electrons and delocalized holes, based on the risetime of the photoluminescence signal is more than two orders of magnitude shorter than that expected localized excitons.
Keywords
III-V semiconductors; electron-hole recombination; excitons; gallium arsenide; localised states; photoluminescence; radiative lifetimes; semiconductor epitaxial layers; wide band gap semiconductors; GaAsN; GaAsN epilayers; delocalized holes; localized electrons; localized excitons; photoluminescence; radiative recombination; Charge carrier processes; Excitons; Gallium arsenide; Luminescence; Nitrogen; Photoluminescence; Pump lasers; Radiative recombination; Temperature dependence; X-ray lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
ISSN
1097-2137
Print_ISBN
0-7803-7571-8
Type
conf
DOI
10.1109/COMMAD.2002.1237295
Filename
1237295
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