Light emission from LPCVD silicon nanocrystals: the effect of composition and annealing

Author

Koukos, K. ; Bedel-Pereira, E. ; Bouscayrol, L. ; Scheid, E. ; Gauthier-Lafaye, O. ; Bonnefont, S. ; Sarrabayrouse, G. ; Lozes-Dupuy, F.

Author_Institution

LAAS-CNRS, Toulouse

fYear

2007

fDate

17-22 June 2007

Firstpage

1

Lastpage

1

Abstract

This paper discusses the effect of composition and annealing on the light emission of silicon nanocrystals grown by low pressure chemical vapour deposition. Results show that a short period rapid thermal annealing (RTA) step introduced before the conventional annealing significantly enhances the emission properties. RTA increases photoluminescence intensity and narrows the spectral width.

Keywords

elemental semiconductors; nanostructured materials; photoluminescence; rapid thermal annealing; silicon; spectral line narrowing; Si; annealing; composition effect; light emission; low pressure chemical vapour deposition; photoluminescence intensity; rapid thermal annealing; silicon nanocrystals; spectral width narrowing; Chemical vapor deposition; Crystallization; Dielectric materials; Light sources; Nanocrystals; Optical materials; Photoluminescence; Rapid thermal annealing; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-0931-0

Electronic_ISBN

978-1-4244-0931-0

Type

conf

DOI

10.1109/CLEOE-IQEC.2007.4386177

Filename

4386177