Title :
Structural, electrical and optical properties of MeV As+ ion implanted InP
Author :
Carmody, C. ; Tan, H.H. ; Jagadish, C. ; Zou, J. ; Dao, L. ; Gal, M.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
The structural, optical and electrical properties of MeV ion implanted InP were studied as a function of annealing temperature. At high annealing temperatures, the implanted material exhibited picosecond optical responses and sheet resistivities of the order of tens of ohms/square. DCXRD and TEM measurements revealed distinct layers of damage resulting from the implantation.
Keywords :
III-V semiconductors; X-ray diffraction; arsenic; crystal structure; electrical resistivity; indium compounds; ion implantation; optical properties; rapid thermal annealing; transmission electron microscopy; As+ ion implantation; DCXRD; InP:As; TEM; annealing temperature; electrical properties; optical properties; picosecond optical responses; sheet resistivities; structural properties; Annealing; Australia; Indium phosphide; Optical materials; Optical microscopy; Particle beam optics; Sheet materials; Temperature; Transmission electron microscopy; Ultrafast optics;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
Print_ISBN :
0-7803-7571-8
DOI :
10.1109/COMMAD.2002.1237296
