DocumentCode :
2155698
Title :
Evolution of InGaAs/InP quantum well intermixing as a function of cap layer
Author :
Carmody, C. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear :
2002
fDate :
11-13 Dec. 2002
Firstpage :
491
Lastpage :
494
Abstract :
InP- and InGaAs- capped single In0.53Ga0.47As/InP quantum wells were implanted with 20 keV and 1 MeV P ions at 200 °C. Blueshifts in the quantum well emissions after annealing were studied as a function of implant dose. Rutherford backscattering channeling spectrometry studies were used to monitor the damage created in the near surface region of the samples. The observed energy shifts have been correlated with damage accumulation and defect migration behaviour in both systems.
Keywords :
Rutherford backscattering; channelling; chemical interdiffusion; crystal defects; ion implantation; rapid thermal annealing; semiconductor quantum wells; spectral line shift; 1 MeV; 20 keV; 200 degC; InGaAs-InP; Rutherford backscattering channeling spectrometry; annealing; blueshifts; cap layer; damage; defect migration; implant dose; ion implantation; quantum well intermixing; Annealing; Backscatter; Chemical vapor deposition; Implants; Indium gallium arsenide; Indium phosphide; Insulation; MOCVD; Monitoring; Spectroscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
ISSN :
1097-2137
Print_ISBN :
0-7803-7571-8
Type :
conf
DOI :
10.1109/COMMAD.2002.1237297
Filename :
1237297
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2155698
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