Evolution of InGaAs/InP quantum well intermixing as a function of cap layer

Author

Carmody, C. ; Tan, H.H. ; Jagadish, C.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

fYear

2002

fDate

11-13 Dec. 2002

Firstpage

491

Lastpage

494

Abstract

InP- and InGaAs- capped single In_0.53Ga_0.47As/InP quantum wells were implanted with 20 keV and 1 MeV P ions at 200 °C. Blueshifts in the quantum well emissions after annealing were studied as a function of implant dose. Rutherford backscattering channeling spectrometry studies were used to monitor the damage created in the near surface region of the samples. The observed energy shifts have been correlated with damage accumulation and defect migration behaviour in both systems.

Keywords

Rutherford backscattering; channelling; chemical interdiffusion; crystal defects; ion implantation; rapid thermal annealing; semiconductor quantum wells; spectral line shift; 1 MeV; 20 keV; 200 degC; InGaAs-InP; Rutherford backscattering channeling spectrometry; annealing; blueshifts; cap layer; damage; defect migration; implant dose; ion implantation; quantum well intermixing; Annealing; Backscatter; Chemical vapor deposition; Implants; Indium gallium arsenide; Indium phosphide; Insulation; MOCVD; Monitoring; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

ISSN

1097-2137

Print_ISBN

0-7803-7571-8

Type

conf

DOI

10.1109/COMMAD.2002.1237297

Filename

1237297