• DocumentCode
    2155713
  • Title

    65nW CMOS temperature sensor for ultra-low power microsystems

  • Author

    Seokhyeon Jeong ; Jae-Yoon Sim ; Blaauw, D. ; Sylvester, Dennis

  • Author_Institution
    Univ. of Michigan, Ann Arbor, MI, USA
  • fYear
    2013
  • fDate
    22-25 Sept. 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We propose a temperature sensor using a novel process-invariant temperature sensing element and voltage to current converter for battery-operated ultra-low power micro systems. By introducing a new temperature-to-voltage sensing element that outputs only 75mV, the sensor achieves ultra-low power. The sensor was implemented in 180nm CMOS process and uses 0.09mm2 of area. Measurements from test chips show 65nW power consumption, the lowest reported to date, with an inaccuracy of +1.3°C /-1.4°C across 0°C to 100°C after 2-point calibration.
  • Keywords
    CMOS integrated circuits; calibration; low-power electronics; micromechanical devices; microprocessor chips; power convertors; temperature sensors; 2-point calibration; CMOS temperature sensor; battery-operated ultralow power microsystems; power 65 nW; power consumption; process-invariant temperature sensing element; size 180 nm; temperature-to-voltage sensing element; test chips; voltage 75 mV; voltage-current converter; CMOS integrated circuits; Power demand; Radiation detectors; Resistors; Temperature measurement; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Custom Integrated Circuits Conference (CICC), 2013 IEEE
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • DOI
    10.1109/CICC.2013.6658447
  • Filename
    6658447