Title :
Low dose SIMOX and impact of ITOX process on quality of SOI film
Author :
Maszara, W.P. ; Bennett, J. ; Boden, T. ; Dockerty, R. ; Gondran, C.F.H. ; Jackett-Murphy, S. ; Vasudev, P.K. ; Anc, M.J. ; Hovel, H.
Author_Institution :
SEMATECH, Austin, TX, USA
Abstract :
Summary form only given. Internal thermal oxidation (ITOX) has been shown to improve the quality of buried oxide (BOX) in low dose (4E17 cm-2) SOI SIMOX material. SOI film quality of ITOX SIMOX was determined to be as good as bulk in terms of the integrity of gate oxide grown on it. We have investigated low dose SIMOX material and the impact of its high temperature annealing as well as the subsequent ITOX process on structure and electrical properties of its SOI film. Several new findings about the SOI film quality and its relationship to process parameters are reported
Keywords :
SIMOX; annealing; buried layers; ion implantation; oxidation; 1350 C; 200 mm; ITOX process; SOI SIMOX material; SOI film quality; Si; buried oxide; electrical properties; gate oxide integrity; high temperature annealing; internal thermal oxidation; low dose SIMOX; process parameters; Annealing; Argon; Atmospheric waves; Atomic force microscopy; Etching; MOS capacitors; Oxidation; Photoconductivity; Rough surfaces; Temperature;
Conference_Titel :
SOI Conference, 1997. Proceedings., 1997 IEEE International
Conference_Location :
Fish Camp, CA
Print_ISBN :
0-7803-3938-X
DOI :
10.1109/SOI.1997.634911
