ST-MRAM fundamentals, challenges, and applications

Author

Andre, Torsten ; Alam, Syed M. ; Gogl, D. ; Subramanian, C.K. ; Lin, Huiming ; Meadows, W. ; Zhang, Xiaobing ; Rizzo, N.D. ; Janesky, J. ; Houssameddine, Dimitri ; Slaughter, J.M.

Author_Institution

Everspin Technol., Austin, TX, USA

fYear

2013

fDate

22-25 Sept. 2013

Firstpage

1

Lastpage

8

Abstract

Magnetoresistive Random Access Memory (MRAM) technology emerged from research and development into volume production within the last decade in the form of Toggle MRAM. The latest Magnetic Tunnel Junction (MTJ) based memory technology, Spin-Torque MRAM, has reached the level of customer sampling, offering higher density and bandwidth. Spin-Torque MRAM enables new applications, offers a wide range of features for use in embedded memory, and has the potential to extend to technology nodes beyond the capability of DRAM. This paper describes the devices, fundamental circuit challenges, and applications of this evolving MTJ based memory.

Keywords

DRAM chips; MRAM devices; magnetic tunnelling; research and development; DRAM; MTJ; ST-MRAM; magnetic tunnel junction; magnetoresistive random access memory; research and development; spin-torque MRAM; volume production; Arrays; Conductors; Magnetic tunneling; Perpendicular magnetic anisotropy; Resistance; Switches; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference (CICC), 2013 IEEE

Conference_Location

San Jose, CA

Type

conf

DOI

10.1109/CICC.2013.6658449

Filename

6658449