DocumentCode
2155775
Title
Diamond for high power electronics
Author
Kohn, Erhard ; Kusterer, Joachim ; Denisenko, Andrej
Author_Institution
Dept. of Electron Devices & Circuits, Ulm Univ., Germany
fYear
2005
fDate
12-17 June 2005
Abstract
The current status and perspective of diamond as wide bandgap semiconductor in microwave power and high temperature electronics is reviewed. Predicted RF power densities above 50 W/mm and diode operation above 1000 °C characterize this extraordinary material. In addition, the properties predistine diamond films also for RF MEMS. A bi-stable in-line switch is discussed.
Keywords
diamond; high-temperature electronics; micromechanical devices; power semiconductor devices; wide band gap semiconductors; RF MEMS; RF power densities; bistable in-line switch; diamond films; diode operation; high power electronics; high temperatur electronics; microwave power electronics; wide bandgap semiconductor; Boron; Doping; FETs; Nitrogen; Plasma temperature; Radio frequency; Radiofrequency microelectromechanical systems; Semiconductor films; Substrates; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2005 IEEE MTT-S International
ISSN
01490-645X
Print_ISBN
0-7803-8845-3
Type
conf
DOI
10.1109/MWSYM.2005.1516767
Filename
1516767
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