A bit-by-bit re-writable Eflash in a generic logic process for moderate-density embedded non-volatile memory applications

A bit-by-bit re-writable embedded flash memory is demonstrated in a generic 65nm logic process for moderate-density embedded non-volatile memory applications. The proposed 6T embedded flash memory cell improves the overall cell endurance by eliminating redundant program/erase cycles without disturbing cells in the unselected wordlines. A multistory high voltage switch utilizes four boosted supply levels generated by a compact voltage doubler based on-chip negative charge pump.