Non-overlapping super self-aligned BiCMOS with 87 ps low power ECL

Author

Chiu, T.-Y. ; Chin, G.M. ; Lau, M.Y. ; Hanson, R.C. ; Morris, M.D. ; Lee, K.F. ; Voshchenkov, A.M. ; Swatrz, R.G. ; Archer, V.D. ; Liu, M.T.Y. ; Finegan, S.N. ; Feuer, M.D.

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

752

Lastpage

755

Abstract

It is demonstrated that high-speed bipolar and CMOS processes can be merged without compromise on either device. A NOVA (nonoverlapping super self-aligned) structure with an advanced epi/isolation process that reduces parasitic capacitances and resistances is reported. The scheme combines lateral autodoping free epi deposition with a novel fully recessed oxide process. This approach significantly simplifies the isolation process and is an important factor in achieving high speed with a conservative 1.5- mu m design rule. A high-speed frequency divider, a multiplexer, and a demultiplexer operating up to 4.1 GHz, 5.5 Gb/s, and 6.2 Gb/s, respectively, have been fabricated. The results show that NOVA BiCMOS is suitable for Gb/s digital VLSI application.<>

Keywords

BIMOS integrated circuits; VLSI; digital integrated circuits; emitter-coupled logic; integrated logic circuits; 1.5 micron; 4.1 to 6.2 Gbit/s; 87 ps; BiCMOS; Gb/s digital VLSI application; NOVA structure; advanced epi/isolation process; demultiplexer; fully recessed oxide process; high speed operation; high-speed frequency divider; lateral autodoping free epi deposition; low power ECL; multiplexer; nonoverlapping super self-aligned; Application specific integrated circuits; BiCMOS integrated circuits; CMOS technology; Conductivity; Etching; Fabrication; Implants; Isolation technology; Signal processing; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32921

Filename

32921