• DocumentCode
    2155929
  • Title

    W-band RF MEMS double and triple-stub impedance tuners

  • Author

    Vähä-Heikkilä, T. ; Varis, J. ; Tuovinen, J. ; Rebeiz, G.M.

  • Author_Institution
    Michigan Univ., Ann Arbor, MI, USA
  • fYear
    2005
  • fDate
    12-17 June 2005
  • Abstract
    Reconfigurable integrated impedance tuners have been developed for W-band on-wafer noise parameter and load-pull measurement applications. The impedance tuners are based on double and triple-stub topologies and employ 11 switched MEMS capacitors producing 2048 (211) different impedances. Measured |ΓMAX| for the double-stub tuner is 0.92 and 0.82 at 75 and 100 GHz from 110 measurements out of 2048 possible impedances, and 0.92 and 0.83 for the triple-stub tuner. To our knowledge, this represents the first W-band integrated impedance tuner to date.
  • Keywords
    circuit tuning; impedance matching; microswitches; microwave switches; waveguide components; 100 GHz; 75 GHz; MEMS capacitors; W-band RF MEMS; double-stub topologies; double-stub tuner; load-pull measurement; matching network; on-wafer noise parameter; reconfigurable integrated impedance tuners; triple-stub topologies; triple-stub tuner; Capacitors; Impedance measurement; Joining processes; Micromechanical devices; Microswitches; Noise measurement; Radiofrequency microelectromechanical systems; Topology; Tuners; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2005 IEEE MTT-S International
  • ISSN
    01490-645X
  • Print_ISBN
    0-7803-8845-3
  • Type

    conf

  • DOI
    10.1109/MWSYM.2005.1516774
  • Filename
    1516774
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2155929