DocumentCode :
2155929
Title :
W-band RF MEMS double and triple-stub impedance tuners
Author :
Vähä-Heikkilä, T. ; Varis, J. ; Tuovinen, J. ; Rebeiz, G.M.
Author_Institution :
Michigan Univ., Ann Arbor, MI, USA
fYear :
2005
fDate :
12-17 June 2005
Abstract :
Reconfigurable integrated impedance tuners have been developed for W-band on-wafer noise parameter and load-pull measurement applications. The impedance tuners are based on double and triple-stub topologies and employ 11 switched MEMS capacitors producing 2048 (211) different impedances. Measured |ΓMAX| for the double-stub tuner is 0.92 and 0.82 at 75 and 100 GHz from 110 measurements out of 2048 possible impedances, and 0.92 and 0.83 for the triple-stub tuner. To our knowledge, this represents the first W-band integrated impedance tuner to date.
Keywords :
circuit tuning; impedance matching; microswitches; microwave switches; waveguide components; 100 GHz; 75 GHz; MEMS capacitors; W-band RF MEMS; double-stub topologies; double-stub tuner; load-pull measurement; matching network; on-wafer noise parameter; reconfigurable integrated impedance tuners; triple-stub topologies; triple-stub tuner; Capacitors; Impedance measurement; Joining processes; Micromechanical devices; Microswitches; Noise measurement; Radiofrequency microelectromechanical systems; Topology; Tuners; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2005 IEEE MTT-S International
ISSN :
01490-645X
Print_ISBN :
0-7803-8845-3
Type :
conf
DOI :
10.1109/MWSYM.2005.1516774
Filename :
1516774
Link To Document :
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