Title :
A GaAs MESFET voltage reference
Author :
Allstot, D.J. ; Canfield, P.C. ; Or, P.K. ; Yang, H.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA
Abstract :
A precision temperature-insensitive voltage reference technique for use in monolithic GaAs A/D (digital/analog) and D/A (digital/analog) converter subsystems has been developed. The principle of operation is the summation of two temperature-dependent drain current terms of equal magnitudes but opposite signs. A negative dI/dT term is obtained from one GaAs MESFET operated in the square-law region, while a positive dI/dT term comes from a second MESFET operated in the subthreshold saturation region. By summing these currents into an on-chip temperature-insensitive NiCr resistor, a reference voltage with a temperature coefficient of only 65 p.p.m./ degrees C over a 200 degrees C temperature range is obtained. The circuit has been implemented in a 0.25- mu m buried-channel recessed-gate depletion-mode GaAs technology.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; analogue-digital conversion; digital-analogue conversion; field effect integrated circuits; gallium arsenide; linear integrated circuits; reference circuits; 0.25 micron; A/D convertor; ADC; D/A convertor; DAC; GaAs; III-V semiconductors; MESFET; NiCr resistor; buried-channel recessed-gate; converter subsystems; current terms summation; depletion-mode; square-law region; subthreshold saturation region; temperature insensitive technique; temperature-dependent drain current terms; voltage reference; Bipolar transistors; Circuits; Doping; Gallium arsenide; Implants; MESFETs; Photonic band gap; Resistors; Temperature distribution; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32926
