Title :
Effects of different Si3N4 thicknesses on the performance of PECVD SiO2/Si3N4 double layers electrets
Author :
Zhiyu Chen ; Xudong Zou ; Jinwen Zhang
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
In this paper, charge decay of PECVD SiO2/Si3N4 double layers electrets with different thicknesses of Si3N4 under different environmental conditions was investigated. Single layers of PECVD prepared SiO2 and Si3N4 were also studied. Double layers electrets exhibits better charge stability than single layer under different conditions. As for the double layers with 2 nm-100 nm Si3N4, their charge stability at 250°C is as good as each other. However, if the Si3N4 thickness continues to increase, the charge stability will be decreased. Thicker layer of Si3N4 leads to better charge stability under 95%RH. Heat treatment at 250°C can improve charge stability under high humidity condition, especially for double layers electrets with thin Si3N4. After heat treatment at 250°C for 3hrs, the PECVD SiO2/Si3N4 double layers electrets with 50 nm Si3N4 show the optimized charge stability under different conditions.
Keywords :
electrets; plasma CVD; silicon compounds; PECVD; SiO2-Si3N4; charge stability; double layers electrets; heat treatment; size 2 nm to 100 nm; size 50 nm; temperature 250 degC; time 3 hr; Biomedical measurements; Corona; Electrets; Electrodes; Fabrication; Heat treatment; Laboratories; Silicon compounds; Stability; Voltage; Double Layers; Electrets; PECVD; Si3N4 thickness; SiO2/Si3N4;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4735057
