Title :
Optimization of macropore silicon morphology etched by photo-electrochemistry
Author :
Wang, Guozheng ; Fu, Shencheng ; Gao, Yanjun ; Li, Ye ; Wang, Xin ; Duanmu, Qingduo
Author_Institution :
Sch. of Sci., Changchun Univ. of Sci. & Technol., Changchun, China
Abstract :
Macropore silicon etching with photo-electro-chemistry was carried out under different experimental conditions, including etching voltage, current density and wave length of optical source et al. The surface, diameter of pore and wall of the macropore silicon were observed with Scanning Electronic Microscope (SEM) and Metallographic Microscope. The influencing factors on morphology of pore were analyzed. Experimental parameters for fabricating high properties macropore silicon were also determined. Macropore silicon with depth of pores up to 300 ¿m and aspect ratios more than 75 was etched with photo-electrochemistry.
Keywords :
current density; elemental semiconductors; etching; photoelectrochemistry; porous semiconductors; scanning electron microscopy; silicon; surface morphology; Si; aspect ratio; current density; depth 300 mum; etching; macropore silicon morphology; metallographic microscope; optical source wavelength; photoelectrochemistry; scanning electronic microscope; Charge carrier processes; Chemicals; Current density; Electrodes; Etching; Hafnium; Optical surface waves; Scanning electron microscopy; Silicon; Surface morphology; electrochemistry; etching; macropore silicon;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4735058
