DocumentCode
2156129
Title
An InGaAsP/InP integration platform with low loss deeply etched waveguides and record SOA RF-linearity
Author
Norberg, Erik J. ; Guzzon, Robert S. ; Parker, John S. ; DenBaars, Steven P. ; Coldren, Larry A.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of California Santa Barbara, Santa Barbara, CA, USA
fYear
2011
fDate
18-22 Sept. 2011
Firstpage
1
Lastpage
3
Abstract
We present a novel InGaAsP/InP integration platform that simultaneously achieves high saturation power and low deeply etched waveguide loss, while requiring only a single blanket regrowth. RF-linearity of SOAs was characterized with record performance.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; optical waveguides; semiconductor optical amplifiers; InGaAsP-InP; InGaAsP/InP integration platform; SOA RF-linearity; low deeply etched waveguide loss; low loss deeply etched waveguides; saturation power; Indium phosphide; Loss measurement; Optical losses; Optical variables measurement; Optical waveguides; Semiconductor optical amplifiers; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Communication (ECOC), 2011 37th European Conference and Exhibition on
Conference_Location
Geneva
ISSN
Pending
Print_ISBN
978-1-4577-1918-9
Type
conf
Filename
6065868
Link To Document