DocumentCode
2156143
Title
A study of the growth dependant properties of undoped and in-situ doped chemically deposited CdS thin films
Author
Reynolds, A.J. ; Hinckley, S. ; Prince, K. ; Short, K.
Author_Institution
Sch. of Eng. & Math., Edith Cowan Univ., Joondalup, WA, Australia
fYear
2002
fDate
11-13 Dec. 2002
Firstpage
563
Lastpage
566
Abstract
Cadmium sulfide thin films have been produced by the chemical bath deposition method in order to study the growth dependant properties and composition of the CdS. The specific categories of interest include deposition temperature, in-situ indium doping, and post deposition annealing. The films were subjected to a number of analysis techniques including atomic force microscopy, secondary ion mass spectroscopy, and environmental scanning electron microscopy with charge contrast imaging. Results from this analysis reveal many interesting details concerning the surface topography, the effect of deposition temperature on film composition, and the distribution of indium dopant throughout the film. After annealing in an air atmosphere, nodule like structures have appeared, the indium dopant was found to have an inhomogeneous distribution through the depth of the film, and colloidal particulate deposition was found to increase at higher deposition temperatures.
Keywords
II-VI semiconductors; annealing; atomic force microscopy; cadmium compounds; impurity distribution; indium; liquid phase deposition; optical films; scanning electron microscopy; secondary ion mass spectra; semiconductor doping; semiconductor growth; semiconductor thin films; surface topography; wide band gap semiconductors; CdS; CdS:In; atomic force microscopy; cadmium sulfide thin films; charge contrast imaging; chemical bath deposition; colloidal particulate deposition; deposition temperature; environmental scanning electron microscopy; growth dependant properties; in-situ indium doping; indium dopant distribution; post deposition annealing; secondary ion mass spectroscopy; surface topography; Annealing; Atomic force microscopy; Cadmium compounds; Chemicals; Doping; Image analysis; Indium; Scanning electron microscopy; Sputtering; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
ISSN
1097-2137
Print_ISBN
0-7803-7571-8
Type
conf
DOI
10.1109/COMMAD.2002.1237314
Filename
1237314
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