Title :
PMOS ring oscillating digital pressure sensor manufactured by MEMS proces
Author :
Yang, James Y. ; Yu, Zhiping ; Liu, Litian
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
A new digital pressure-sensing device is presented. It employs the Micro-ElectroMechanical Systems (MEMS) technologies to form pressure sensing using PMOS ring oscillators to generate frequency which depends on the pressure-induced stress. The digital pressure sensor has several advantages. One of them is to convert the analog measurement of pressures into the frequency measurement. Compared to a direct pressure measurement, it is much more convenient and easier to conduct the frequency measurement with digital circuits. Since the ring resonators are exposed to the change of the pressure, the structure is significantly simplified as no shielding protections of the sensor from the pressure are required.
Keywords :
MOS integrated circuits; analogue-digital conversion; microsensors; oscillators; pressure measurement; signal processing equipment; MEMS process; PMOS ring oscillating digital pressure sensor; frequency generation; microelectromechanical systems; Digital circuits; Frequency measurement; Manufacturing; Microelectromechanical systems; Micromechanical devices; Optical ring resonators; Pressure measurement; Protection; Ring oscillators; Stress;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4735064
