Title :
Optical study of electronic states in GaAsN
Author :
Luo, X.D. ; Yang, C.L. ; Huang, J.S. ; Xu, Z.Y. ; Liu, J. ; Ge, W.K. ; Zhang, Y. ; Mascarenhas, A. ; Xin, H.P. ; Tu, C.W.
Author_Institution :
Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
Abstract :
GaAs1-xNx alloys with small N composition (x<1%) and GaAsN/GaAs quantum wells (QWs) were studied by continuous wave photoluminescence (PL), pulse wave excitation PL and time-resolved PL. In the PL spectra an extra transition located at the higher energy side of the commonly reported N-related emissions was observed. By measuring the PL dependence on temperature and excitation power, the new PL peak was identified as a transition of alloy band edge-related recombination in GaAsN and delocalized transition in QWs. The PL dynamics further confirms its intrinsic nature of band edge states rather than N-related bound states.
Keywords :
III-V semiconductors; band structure; gallium arsenide; interface states; photoluminescence; semiconductor quantum wells; time resolved spectra; wide band gap semiconductors; GaAs1-xNx; GaAsN-GaAs; GaAsN/GaAs quantum wells; alloy band edge-related recombination; continuous wave photoluminescence; delocalized transition; electronic states; pulse wave excitation PL; time-resolved PL; Absorption; Gallium arsenide; Impurities; Laser mode locking; Photoluminescence; Photonic band gap; Power measurement; Quantum well lasers; Radiative recombination; Temperature dependence;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
Print_ISBN :
0-7803-7571-8
DOI :
10.1109/COMMAD.2002.1237320
