Two types of 500 V double gate lateral N-ch bipolar-mode MOSFETs in dielectrically isolated p/sup -/ and n/sup -/ silicon islands

Author

Nakagawa, A. ; Yamaguchi, Y. ; Watanabe, K. ; Ogura, T.

Author_Institution

Toshiba Res. & Dev. Center, Kawasaki, Japan

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

817

Lastpage

820

Abstract

Two types of 500-V double-gate lateral N-ch bipolar-mode MOSFET (metal-oxide-semiconductor field effect transistor), fabricated on dielectrically isolated p/sup -/ and n/sup -/ silicon islands, were compared. It was found that electrical characteristics for devices on p/sup -/ silicon islands are superior to those of counterpart devices on n/sup -/ silicon islands. It was also shown that double gate operation improves the device tradeoff relation, realizing 200-ns fall time and 0.075- Omega cm/sup 2/ on-resistance-area product. The devices were passivated by SIPOS resistive field plates, which allow series connection by metal interconnection layers without breakdown voltage reduction.<>

Keywords

insulated gate field effect transistors; power transistors; 200 ns; 500 V; MOSFETs; SIPOS resistive field plates; dielectrically isolated Si islands; double gate; electrical characteristics; fall time; field effect transistor; lateral N-ch bipolar-mode; metal interconnection layers; n/sup -/ type islands; p/sup -/ type islands; passivated devices; power transistors; series connection; Breakdown voltage; Dielectric breakdown; Dielectric devices; Dielectric substrates; Electric variables; Insulated gate bipolar transistors; MOSFETs; Semiconductor films; Silicon; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32936

Filename

32936