Title :
Ultra-high speed AlGaAs/GaAs heterojunction bipolar transistors
Author :
Ishibashi, T. ; Nakajima, O. ; Nagata, K. ; Yamauchi, Y. ; Ito, H. ; Nittono, T.
Author_Institution :
LSI Lab., NTT, Kanagawa, Japan
Abstract :
The characteristic device performance of AlGaAs/GaAs ballistic collection transistors (BCTs) and applications of this device to integrated circuits are considered. The BCT structure reduces the collector transit times, which leads to an increase in cutoff frequency. Although near-ballistic collection only occurs in a relatively narrow collector voltage range, the cutoff frequency can be maximized at a desired collector voltage. This feature is useful when applying BCTs to logic gates. A propagation delay time of 1.9 ps/gate has been obtained in an ECL (emitter coupled logic) ring oscillator configured of BCTs. The maximum toggle frequency of a one-by-two frequency divider consisting of eight NOR-gates is as high as 20.2 GHz. These results demonstrate the high-speed potential of BCTs.<>
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; emitter-coupled logic; gallium arsenide; heterojunction bipolar transistors; integrated logic circuits; 1.9 ps; 20.2 GHz; AlGaAs-GaAs; HBT: III-V semiconductors; NOR-gates; ballistic collection transistors; collector voltage range; emitter coupled logic; frequency divider; heterojunction bipolar transistors; integrated circuits; logic gates; near-ballistic collection; propagation delay time; ultra high speed operation; Application specific integrated circuits; Cutoff frequency; Frequency conversion; Gallium arsenide; Heterojunction bipolar transistors; Lead time reduction; Logic gates; Propagation delay; Ring oscillators; Voltage;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32938
