Title :
Modeling and operating characteristics of InGaAs-based resonant-tunneling hot electron transistors (RHETs)
Author :
Ohnishi, H. ; Yokoyama, N. ; Shibatomi, A.
Author_Institution :
Fujitsu Ltd., Atsugi, Japan
Abstract :
The authors discuss the modeling and operating characteristics of InGaAs/In(AlGa)As resonant-tunneling hot electron transistors (RHETs), using a self-consistent calculation for a resonant-tunneling emitter and a Monte Carlo simulation for hot electron transport in the base region. Coupled plasmon-longitudinal-optical-phonon-mode scattering and electron-electron (e-e) scattering in the Landau damped regime are taken into account. It is found that the RHET has an operating region where the collector transfer ratio is equal to or greater than 1 due to e-e scattering.<>
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; gallium arsenide; hot electron transistors; indium compounds; semiconductor device models; tunnelling; III-V semiconductors; InGaAs-In(AlGa)As; Landau damped regime; Monte Carlo simulation; RHETs; base region; coupled plasmon-longitudinal-optical-phonon-mode scattering; electron-electron scattering; hot electron transistors; hot electron transport; modeling; operating characteristics; resonant-tunneling; resonant-tunneling emitter; Acoustic scattering; Analog circuits; Charge carrier density; Electron emission; Gallium arsenide; Indium compounds; Indium gallium arsenide; Particle scattering; Phonons; Resonant tunneling devices;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32939
